NP15P06SLG
-50
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-100
FORWARD TRANSFER CHARACTERISTICS
V DS = ? 10 V
-40
-10
Pulsed
-30
-20
V GS = ? 10 V
? 4.5 V
-1
-0.1
T ch = ? 55 ° C
? 25 ° C
25 ° C
75 ° C
-10
0
Pulsed
-0.01
-0.001
125 ° C
150 ° C
175 ° C
0
-1
-2
-3
-4
-5
0
-1
-2
-3
-4
-5
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-3
100
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-2.5
-2
-1.5
-1
-0.5
0
V DS = V GS
I D = ? 250 μ A
10
1
0.1
T ch = ? 55 ° C
? 25 ° C
25 ° C
75 ° C
125 ° C
150 ° C
175 ° C
V DS = ? 10 V
Pulsed
-75
-25
25
75
125
175
225
-0.1
-1
-10
-100
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
160
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
160
140
120
100
140
120
100
I D = ? 15 A
? 7.5 A
Pulsed
80
60
40
20
0
V GS = ? 4.5 V
? 10 V
Pulsed
80
60
40
20
0
? 3 A
-0.1
-1
-10
-100
0
-5
-10
-15
-20
4
I D - Drain Current - A
Data Sheet D19078EJ2V0DS
V GS - Gate to Source Voltage - V
相关PDF资料
NP160N04TUG-E1-AY MOSFET N-CH 40V 160A TO-263-7
NP161N04TUG-E1-AY MOSFET N-CH 40V 160A TO-263-7
NP180N04TUG-E1-AY MOSFET N-CH 40V 180A TO-263-7
NP22N055SLE-E1-AY MOSFET N-CH 55V 22A TO-252
NP32N055SHE-E1-AY MOSFET N-CH 55V 32A TO-252
NP32N055SLE-E1-AY MOSFET N-CH 55V 32A TO-252
NP34N055SHE-E1-AY MOSFET N-CH 55V 34A TO-252
NP34N055SLE-E1-AY MOSFET N-CH 55V 34A TO-252
相关代理商/技术参数
NP15P06SLG-E2-AY 制造商:Renesas Electronics Corporation 功能描述:
NP16 制造商:未知厂家 制造商全称:未知厂家 功能描述:16 AMPERE SILICON RECTIFIER
NP1-6 制造商:Dantona Industries 功能描述:ENERSYS NP1-6 6 VOLT SEALED LEAD ACID BATTERY 制造商:YUASA 功能描述:BATTERY 6V 1AH 制造商:Yuasa Battery Inc 功能描述:BATTERY, 6V, 1AH
NP160CR832K12E 制造商:NYLOK 功能描述:
NP160N04TDG 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP160N04TDG-E1-AY 功能描述:MOSFET N-CH 40V 160A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP160N04TDG-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP160N04TUG 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET